EMI Shield용(전자파 차폐) Sputtering System

반도체 소자 표면에 보호막을 증착하여 전자파를 차폐 시키는 기술을 적용한 시스템

Application : Semiconductor PKG, SAW Filter

Cluster type

EFEM / Loadlock & Degassing / PT / Transfer / PM(SUS, Cu) / Stock

고품질 / 고균일 박막 형성

우수한 Step coverage 및 소자 보호를 위한 100℃이하 공정 구현

Target Erosion대비 증착 효율이 우수한 Round type cathode

낮은 COO(Cost of Operation)

높은 가동률, Small foot-print

Items Specifications
System System Control Full Automation
Configuration Cluster
Thin Film Total Thickness SUS 0.2/ Cu 3.0/ SUS 0.2㎛
Configuration Source Type Magnetron Cathode
Lamp Type Heater for Degassing Max 150℃ on Substrate
Substrate rotation sputtering Rotation
Magnet rotation sputtering Rotation
Plasma Treatment ICP+RF Bias type
Performance Step Coverage 〉 40%
Thickness Uniformity 〈 3% (Top Layer)
PKG Temperature Control 〈 100℃
Contact Resistance 〈 0.2Ω
Peel off(Adhesion) 5B(0%)
SE(Shielding effectiveness) 〉 75dB
Plasma Contact angle 5Degree
CAPA Tact Time (1Frame depo. time) 〈 5mins