Sputtering System

Sputtering System (Realization of high uniform thin film thickness)

Application : Semiconductor, LED, SAW Filter

Highly thickness uniform of deposition film (≤0.5%@40nm) / High productivity (4”wafer 6ea Loading)

Deposition of various materials (Metal(Ti, Al, Cu..), Oxide(SiO2))

Substrate : Wafer & Glass

System type : Cluster Type (Loadlock & Unloadlok / Process / Transfer chamber), Option items (Plasma treatment, Degassing chamber)

- Wafer Size : 2inch~6inch

- Process Application : Thin film(Metal, Oxide), Seed Metal(Ti, Cu..)

- Loading Capacity : Cassette(4”wafer x 24ea), PM(4”wafer x 6ea), Wafer transfer by vacuum robot

- Cathode Type : Round Magnetron cathode

Sputtering System (Seed Metal)

Application : Semiconductor, LED, SAW Filter

Thickness uniformity(≤5%) / High productivity (4”wafer 8ea Loading)

Metal(Ti, Al, Cu..) material deposition

Substrate : Wafer & Glass

System type : Cluster Type (Loadlock & Unloadlok / Process / Transfer chamber), Option items (Plasma treatment, Degassing chamber)

- Wafer Size : 2inch~6inch

- Wafer Type : Si, LT Wafer(180~250㎛)

- Process Application : Seed Metal(SAW Filter)

- Loading Capacity : Cassette(4”wafer x 24ea), PM(4”wafer x 8ea), Wafer transfer by vacuum robot

- Cathode Type : Round Magnetron cathode

Items Specifications
System control PC Control, Full Automation
System type Cluster type
Configuration 2 Load/Unloadlock Chamber / 1 Plasma treatment Chamber
1 Transfer Chamber / 2 Process Chamber(Ti, Cu)
System foot-print 5,500(W)×5,000(D)×2,000(H)mm (Include maintenance area)
Substrate size 4Inch LT Wafer (2 ~ 6Inch)
Loading capacity L/L & UL/L Chamber : Wafer 24ea loading (Standard cassette)
Plasma treatment Chamber : Wafer 8ea loading
Process Chamber : Wafer 8ea loading
Substrate transfer Vacuum robot (In Transfer chamber)
Thin film material Metal (Ti, Cu..)
Sputtering source 8Inch Round type magnetron gun : 1Chamber 2sets (Ti, Cu)
Substrate & Disk motion Substrate rotation & Disk revolution
Plasma treatment ICP+RF Bias type
Vacuum performance Ultimate pressure : ≤ 5.0E-7 Torr (within 24hrs)
Thickness uniformity ≤ 1.5% @300nm
Deposition rate 5Å/s ~ 20Å/s
Contact angle ≤ 5°

- Wafer Size : 2inch~6inch

- Wafer Type : Si, LT Wafer(180~250㎛)

- Process Application : Seed Metal(SAW Filter)

- Loading Capacity : Cassette(4”wafer x 24ea), PM(4”wafer x 8ea), Wafer transfer by vacuum robot

- Cathode Type : Round Magnetron cathode